| 摘要 |
PROBLEM TO BE SOLVED: To provide a film-forming apparatus which improves the quality of a formed film, by comparatively simply arranging a magnetic field source therein, and to provide a film-forming method. SOLUTION: The plasma CVD film-forming apparatus 24A has a structure of setting a cathode 4 on the side of the film substrate 4 to be film-formed, and an anode 8 so as to face the cathode 4, so that both electrodes can generate an electric field 22 between them, which decomposes a hydrocarbon gas 20 to form the film on a film substrate 4, wherein the structure has a magnetic-field-generating section 17 arranged on an opposite side of an anode 8 with respect to a cathode 4, so as to generate a magnetic field 23a having a vector in a direction of intersecting with an electric field 22 on the surface of the film substrate 4. COPYRIGHT: (C)2006,JPO&NCIPI
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