| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser diode with an improved structure, in which the clad layer has an asymmetric refractive index. SOLUTION: The semiconductor laser diode comprises an active layer 130; an upper clad layer 121 formed above the active layer 130; a first lower clad layer 111a formed below the active layer 130; a second lower clad layer 111b formed under the first lower clad layer 111a; and a substrate 110 formed under the second lower clad layer 111b, wherein a refractive index of the first lower clad layer 111a is identical with a refractive index of the upper clad layer 121 and is lower than a refractive index of the second lower clad layer 111b. COPYRIGHT: (C)2006,JPO&NCIPI
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