| 摘要 |
PROBLEM TO BE SOLVED: To provide an atmospheric chemical vapor deposition apparatus having excellent practicality capable of increasing the film deposition rate with a simple configuration. SOLUTION: The atmospheric chemical vapor deposition apparatus deposits an oxide film on a film deposition face of a substrate 1 by providing the substrate 1 to be heated under the atmospheric pressure and a nozzle body 2 having nozzle holes 3 to blow material gas consisting of evaporated film deposition material and carrier gas onto a film deposition face of the substrate 1 in a film deposition chamber in an opposing manner to each other, and by blowing the material gas from the nozzle holes 3. A tip part of the nozzle body 2 forms a planar tip part 2a expanding substantially parallel to the substrate 1, and the plurality of nozzle holes 3 are formed in the planar tip part 2a of the nozzle body 2. The plurality of nozzle holes 3 are arranged parallel to the substrate 1, and the material gas is simultaneously blown to the film deposition faces of the substrate 1, i.e., opposing faces of the planar tip part 2a of the nozzle body 2. COPYRIGHT: (C)2006,JPO&NCIPI
|
