发明名称 |
Semiconductor switch |
摘要 |
The present invention, which aims at providing a semiconductor switch capable of reducing harmonic distortion, is made up of: an input terminal 101 ; an output terminal 102 ; a through FET 106 that is connected serially to the signal path between the input terminal 101 and the output terminal 102 ; a shunt FET 107 that is connected in between the output terminal 102 and the ground; and a distortion reducing circuit 120 that is connected in parallel with the through FET 106 . In this semiconductor switch, the distortion reducing circuit 120 includes: a first diode 109 and a second diode 110 that are placed in parallel with each other; a first constant voltage source 111 and a second constant voltage source 112 that are placed in parallel with each other; and a FET 108.
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申请公布号 |
US2005264341(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050138474 |
申请日期 |
2005.05.27 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
HIKITA MASAHIRO;YANAGIHARA MANABU;UEDA DAISUKE |
分类号 |
H01P1/15;H03K17/06;H03K17/687;H04B1/44;(IPC1-7):H03K17/687 |
主分类号 |
H01P1/15 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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