发明名称 |
A Wideband Gap Power Semiconductor Device Having A Low On-Resistance And Having A High Aavalanche Ccapability Used For Power Control |
摘要 |
A power semiconductor device includes a first semiconductor layer, a second semiconductor layer of a first conductivity type, first and second main electrodes, a control electrode and a third semi-conductor layer. The second semiconductor layer is formed on the first semiconductor layer. The first and second main electrodes are formed on the second semiconductor layer separately from each other. The control electrode is formed on the second semiconductor layer between the first and second main electrodes. The third semiconductor layer is formed on the second semiconductor layer between the control electrode and the second main electrode.
|
申请公布号 |
US2005263844(A1) |
申请公布日期 |
2005.12.01 |
申请号 |
US20050191218 |
申请日期 |
2005.07.28 |
申请人 |
SAITO WATARU;OMURA ICHIRO;OHASHI HIROMICHI |
发明人 |
SAITO WATARU;OMURA ICHIRO;OHASHI HIROMICHI |
分类号 |
H01L29/812;H01L21/338;H01L27/06;H01L29/778;(IPC1-7):H01L29/00 |
主分类号 |
H01L29/812 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|