| 摘要 |
IT IS INTENDED TO PROVIDED A SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD IN WHICH A HIGH-RESISTANCE REGION MAINTAINING A HIGH RESISTANCE EVEN UNDER HIGH TEMPERATURES CAN BE MADE IN A NITRIDE III-V COMPOUND SEMICONDUCTOR LAYER HAVING AN ELECTRIC CONDUCTIVITY BY ION IMPLATATION. AFTER A NITRIDE III-V COMPOUND SEMICONDUCTOR LAYER HAVING AN ELECTRIC CONDUCTIVILY IS GROWN, A HIGH RESISTANCE REGION IS FORMED IN THE NITRIDE III-V COMPOUND SEMICONDUCTOR LAYER BY LOCALLY IMPLANTING BORON IONS THEREIN. THE AMOUNT OF IMPLANTED BORON IS PREFERABLY NOT LESS THAN 1/30, OR MORE PREFERABLYNOT LESS THAN 1/15, OF THE CARRIER CONCENTRATION OF THE NITRIDE III-V COMPOUND SEMICONDUCTOR LAYER. THE HIGH-RESISTING REGION IS USED AS A DEVICE ISOLATING REGION OF AN ELECTRON MOVING DEVICE OR AS A CURRENT BLOCKING LAYER OF A SEMICONDUCTOR LASER.
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