| 摘要 |
PROBLEM TO BE SOLVED: To hold high withstand voltage characteristics and to realize low on-resistance by simple constitution in a semiconductor device and its manufacturing method. SOLUTION: The transistor part of the semiconductor device 1 comprises an n-type drain region 2; a p-type base region 3 formed on the side of a main surface S within an n-type drain region 2; an n-type source region 4 formed on the side of the main surface S within the base region 3; a gate electrode 7 arranged through an insulator 6 at a position facing a channel region 5; and a withstand voltage holding region 9 formed so as to surround a transistor. In the semiconductor device 1, in order to secure the withstand voltage characteristics, a low concentration region 10 where an impurity concentration is low is formed in a region other than the drain region 2 (transistor forming region) surrounded by the withstand voltage holding region 9, which is the region on the side of the main surface S in the drain region 2. Since the low concentration region 10 is not formed near the main surface of the region indicated by an arrow 8 where a current flows at the time of the operation of the semiconductor device 1, the on-resistance is not elevated. COPYRIGHT: (C)2006,JPO&NCIPI
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