发明名称 |
Embedded stressed nitride liners for CMOS performance improvement |
摘要 |
The present invention provides a semiconducting device including a gate region positioned on a mesa portion of a substrate; and a nitride liner positioned on the gate region and recessed surfaces of the substrate adjacent to the gate region, the nitride liner providing a stress to a device channel underlying the gate region. The stress produced on the device channel is a longitudinal stress on the order of about 275 MPa to about 450 MPa.
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申请公布号 |
US2005258515(A1) |
申请公布日期 |
2005.11.24 |
申请号 |
US20040851828 |
申请日期 |
2004.05.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHIDAMBARRAO DURESETI;DOKUMACI OMER H. |
分类号 |
H01L21/302;H01L21/336;H01L21/8238;H01L23/58;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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