| 摘要 |
Disclosed herein is a method of manufacturing a semiconductor device, and more specifically, to a method of manufacturing a semiconductor device having a capacitor and a resistor in which a thin film resistor and a capacitor are formed at the same time, a thin film resistor is formed on a metal wiring, and the two thin film resistors are then serially connected. Accordingly, resistance per unit area in substrate can be increased, a device characteristic can be improved and a process unit price can be lowered.
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