GALLIUM OXIDE SINGLE-CRYSTAL COMPLEX, ITS MANUFACTURING METHOD, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FILM USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide gallium oxide single-crystal complex in which mixing of hexagonal based crystal is decreased e.g. when crystal growth of nitride semiconductor is performed, and high-quality cubic crystal can be obtained in which cubic crystal is grown up dominantly to hexagonal based crystal, and which complex can be used as a substrate which is especially suitable for epitaxial growth of cubic crystal GaN, and to provide a method for manufacturing the gallium oxide single-crystal complex and a method for manufacturing a nitride semiconductor film. SOLUTION: In the method for manufacturing gallium oxide single-crystal complex, the gallium oxide single crystal complex has a gallium nitride layer which is composed of cubic gallium nitride (GaN) on the surface of gallium oxide (Ga2O3) single crystal. By performing nitriding which uses ECR plasma or RF plasma to the surface of the gallium oxide (Ga2O3) single crystal, the gallium nitride layer composed of the cubic gallium nitride (GaN) is formed on the surface of the gallium oxide single crystal. Furthermore, in the method for manufacturing a nitride semiconductor film, a nitride semiconductor film is grown by using an RF-MBE method on the surface of the gallium oxide single crystal complex. COPYRIGHT: (C)2006,JPO&NCIPI