SEMICONDUCTOR DEVICE AND PROCESS FOR FABRICATING SAME, AND PROCESS FOR PRODUCING SEMICONDUCTOR SUBSTRATE

摘要

A process for producing a strained SOI substrate having an Si film wherein a tensile strain is induced, a semiconductor device employing the strained SOI substrate and its fabricating process. An SiGe film is grown epitaxially on an si film on a silicon oxide film; surface of the SiGe film is irradiated with a laser beam and heated for a short time; a tensile strain is induced in the Si film as the lattice of the SiGe film relaxes; and then the SiGe film is removed. Since the strained Si film has a high electron mobility and contains no Ge atom in the strained Si film or an underlying film, it has a high quality and operating speed of an n-type MOS transistor employing the strained Si film as a channel layer is enhanced. A p-type MOS transistor of high speed operation and its semiconductor substrate are also disclosed.