SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME, SEMICONDUCTOR SUBSTRATE AND METHOD FOR PRODUCING THE SAME

摘要

A semiconductor substrate having an Si film wherein strain is induced and its production method, a semiconductor device employing the semiconductor substrate and its fabrication method. The semiconductor substrate has such a structure wherein a silicon oxide film, and a strain Si film wherein tensile strain is induced in the direction parallel with the substrate surface are formed on a single crystal silicon substrate. In the production method of the semiconductor substrate, an SiGe film is grown epitaxially on the Si film formed on the silicon oxide film and then the surface of the SiGe film is heated for a short time by laser irradiation. A tensile strain is induced in the Si film due to lattice relaxation of the SiGe film. Subsequently, the SiGe film is removed. An n-type MOS transistor and a p-type MOS transistor of high speed operation employing the semiconductor substrate are also disclosed.