A process for forming an isolation trench in a wafer. The process includes depositing (e.g. by a directional deposition process) a first dielectric material in the trench and then depositing a second dielectric material (e.g. by a directional deposition process) over the first dielectric material in the trench. A third material is deposited in the trench on the second layer. The second material and the third material are selectively etchable with respect to each other. In one example, the first material has a lower dielectric constant than the second material.
申请公布号
WO2005112124(A2)
申请公布日期
2005.11.24
申请号
WO2005US11553
申请日期
2005.04.05
申请人
FREESCALE SEMICONDUCTOR, INC.;YEAP, CHOH-FEI;JEON, YONGJOO;TURNER, MICHAEL D.;VAN GOMPEL, TONI D.
发明人
YEAP, CHOH-FEI;JEON, YONGJOO;TURNER, MICHAEL D.;VAN GOMPEL, TONI D.