| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve an effect for suppressing a surge voltage generated in the reverse recovery of a reflux diode by reducing a switching loss and shortening a switching time. <P>SOLUTION: This drive circuit comprises: a means for applying forward and reverse biases to a control terminal of a semiconductor device; a preliminary charging means for performing preliminary charging by applying a prescribed voltage to the control terminal when turning-off; and a timing control means for controlling operation timings of these means. A Zenner diode 3 is connected between a collector and an emitter of an IGBT 1 of each upper and lower arm, and after turning off the IGBT 1 of one arm, voltages having values that act as polarities for turning on the IGBTs 1 and are lower than a threshold are applied to the control terminal of the IGBT 1 of one arm over a certain period until the completion of the turning-on of the IGBT 1 of the other arm by switches 7c, 7d and dividing resistors 9c, 9d. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
