MULTILAYER ELECTRODE STRUCTURE AND METHOD FOR FORMING

摘要

A first embodiment (Figs. 29A-29H) comprises a multilayer electrode (2906) for a panel display device and a method for forming a nultilayer electrode (2906) for a flat panel display device. The multilayer electrode (2096) is formed by depositing a metal alloy layer (2902). After the deposition of the metal alloy layer (2902), a protective layer (2904) is deposited above the metal alloy layer (2902) to form a multilayer stack (2906). The multilayer stack (2906) is subjected to a cleansing process to remove contaminants. Subsequently, the multilayer stack (2906) is etched to form the multilayer electrode (2906) for the flat panel display device. Another embodiment (Figs. 30-311) comprises a method of forming a multilayer stack (3106) is formed by depositing a first metal alloy layer (3102) above the substrate (3100). After the deposition of te metal alloy layer (3102), a barrier layer (3103) is formed above the first metal alloy layer (3102). The barrier layer (3103) is adapted to prevent the formation of an intermetallic compound within the first metal alloy layer (3102). Subsequently, a second metal alloy layer (3104) is deposited above the barrier layer (3103). The barrier layer (3103) prevents the formation of the intermetallic compound within the second metal alloy layer (3104).