| 摘要 |
A method for producing large bulk group III nitride single crystal at high yield is disclosed by which a transparent, high-quality group III nitride crystal with low dislocation density and uniform thickness can be obtained. In the method for producing group III nitride single crystal, a reaction container holding at least one metal element selected from the group consisting of alkali metals and alkaline earth metals and at least one group III element selected from the group consisting of gallium (Ga), aluminum (Al) and indium (In) is heated to form a flux of the metal element, and then a gas containing nitrogen is introduced into the reaction container for having the group III element react with nitrogen in the flux, thereby growing a group III nitride single crystal. In this connection, the group III nitride single crystal is grown while stirring the flux by, for example, shaking/swaying the reaction container. |
