Semiconductor integrated circuit device configured to prevent the generation of a reverse current in a MOS transistor

摘要

A semiconductor integrated circuit device has a MOS transistor M 2 including a parasitic diode Dx 2 for preventing a reverse current due to a parasitic diode Dx 1 of a MOS transistor M 1 . The semiconductor integrated circuit device further has a voltage setting circuit 1 for turning the MOS transistor M 2 off in a reversely biased state, and an anti-reverse-current element 2 for preventing a reverse current from flowing through the voltage setting circuit 1 in a reversely biased state. In normal operation, a direct-current voltage within the withstand voltage range of the MOS transistor M 2 is fed to the gate thereof according to the voltage applied to the conductive terminal 6 y of the MOS transistor M 2.