| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of a device, by forming circuits with high precision high efficiency to an organic semiconductor thin film. SOLUTION: A metal mask 12 and a quartz glass plate 13, provided with holes according to the pattern of the circuit to be formed, are placed over the surface of the organic semiconductor film 11. The quartz glass plate 13 works also as a weight for fixing the metal mask 12. While atmospheric air is introduced into a reaction chamber 10, ultraviolet rays 21 are irradiated from the upper side of the quartz glass plate 13. With these ultraviolet rays 21, ozone is generated from oxygen in the atmospheric air, the organic semiconductor film 11 at the part of the holes of metal mask 12 reacts with ozone, and thereby, the conductivity thereof is lowered. According to this method, a pattern can be formed with higher accuracy because diffusion into the shadow of mask from the edge of the holes of mask will not be generated, unlike the case of existing evaporation method. Moreover, since a wider area can be irradiated with the ultraviolet ray simultaneously, the pattern can be formed within a short period of time. COPYRIGHT: (C)2006,JPO&NCIPI
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