发明名称 DEFECT INSPECTION METHOD AND DEFECT INSPECTING APPARATUS
摘要 PROBLEM TO BE SOLVED: To detect defects, such as lack of conductors, short-circuitings, and adhesion of foreign matters on a wafer containing a normal conductive pattern, having irregularities with high probability in a film formation and etching process, in the manufacture of a semiconductor device. SOLUTION: A defect inspection apparatus has an imaging element for converting the optical image of a part, containing a normal conductive pattern having surface irregularities, and that of a part compared with a part to be inspected, to an electric charge image for extracting as an electrical signal. The optical image containing a conductive pattern part, having surface irregularities, is set to be an element signal by the imaging element, and the quantity of light in the optical image is controlled so that the element signal is saturated. Further, the element signal of the part to be inspected is fetched by using the quantity of light, thus determining the defects, according to the differential signal of an element signal fetched from the part to be compared and the absolute value of the difference between the element signal of the part having irregularities in the conductive pattern and a saturation level. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005321415(A) 申请公布日期 2005.11.17
申请号 JP20050212914 申请日期 2005.07.22
申请人 MITSUBISHI ELECTRIC CORP 发明人 ONOYAMA AYUMI;SAKURAI KOICHI;OKA KAZUHIRO;ISHII HIROYUKI;FUJIYOSHI KATSUHIRO
分类号 G01N21/956;H01L21/66;(IPC1-7):G01N21/956 主分类号 G01N21/956
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