发明名称 |
Semiconductor device with load resistor and fabrication method |
摘要 |
A semiconductor device with a load resistor is manufactured such that a contact is formed at both ends of the load resistor, and at least one contact is formed between the contacts, in order to prevent impurities from being generated within each contact while the contacts are being generated by etching an insulation layer phenomena of electric charge build up from occurring when an etching process fabricates an insulation layer to generate the contact in a long load resistor located under the insulation layer and insulated electrically and physically.
|
申请公布号 |
US2005255662(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20050169894 |
申请日期 |
2005.06.30 |
申请人 |
LEE WON S;KWON JOON-MO;KIM TAE K;CHOI JIN-KEE;PARK DONG-GUN;KO HYEONG-CHAN;MOON HONG-JOON |
发明人 |
LEE WON S.;KWON JOON-MO;KIM TAE K.;CHOI JIN-KEE;PARK DONG-GUN;KO HYEONG-CHAN;MOON HONG-JOON |
分类号 |
H01L23/52;H01L21/02;H01L21/3205;H01L21/768;H01L21/822;H01L21/8242;H01L27/04;H01L27/08;H01L27/108;(IPC1-7):H02H3/00;H02H7/00;H01L21/20;H01L21/44 |
主分类号 |
H01L23/52 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|