发明名称 Non-volatile semiconductor memory, semiconductor device and charge pump circuit
摘要 A non-volatile semiconductor memory includes a first pump starting to operate at a first timing and producing a first voltage, a second pump starting to operate at a second timing following the first timing and driving a given node at a second voltage, the given node being connected to a non-volatile semiconductor memory cell, and a booster boosting the given node using the first voltage at the second timing.
申请公布号 US2005254313(A1) 申请公布日期 2005.11.17
申请号 US20050126701 申请日期 2005.05.11
申请人 SPANSION LLC 发明人 KURIHARA KAZUHIRO
分类号 G11C5/14;G11C11/34;G11C16/06;G11C16/12;(IPC1-7):G11C11/34 主分类号 G11C5/14
代理机构 代理人
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