发明名称 |
INSPECTION METHOD OF REFLECTION TYPE MASK |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection method of a reflection type mask capable of inspecting more correctly and simply the existence of a defect including the phase defect of the reflection type mask. <P>SOLUTION: The inspection method of the reflection type mask formed by multilayer films includes a step for measuring a secondary radiation emitted from the multilayer films at the time of entering light with a wavelength of 2 to 40nm in the reflection type mask, and a step for judging the existence of the defect of the reflection type mask on the basis of the measurement values. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
申请公布号 |
JP2005322754(A) |
申请公布日期 |
2005.11.17 |
申请号 |
JP20040139059 |
申请日期 |
2004.05.07 |
申请人 |
CANON INC |
发明人 |
MASAKI BUNTARO;MIYAKE AKIRA |
分类号 |
G01N23/223;G01N21/956;G01N23/227;G03F1/22;G03F1/24;G21K1/06;H01L21/027 |
主分类号 |
G01N23/223 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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