| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide stably a semiconductor laser with excellent quality. <P>SOLUTION: There is provided the semiconductor laser provided with an n-InP substrate 1; a multilayer film provided on the n-InP substrate 1 and including a distortion MQW active layer 6; a p side electrode 18 arranged on the multilayer film; a pair of grooves 15 located at both sides of the p side electrode 18, for separating the multilayer film and reaching the n-InP substrate 1; and a plurality of diffraction gratings provided to a region from the one of a pair of the grooves 15 over the other on a diffraction grating forming face located on an upper side of the n-InP substrate 1, or an upper side of any semiconductor film included in the multilayer film. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
