| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein a void formed within an interlayer insulated film can be thoroughly removed by forming a contact hole, and to provide a method for manufacturing the same. <P>SOLUTION: A trench 3 is comprised of a wide trench 3a and a narrow trench 3b. A part for a semiconductor element is formed in the wide trench 3a, while a lead for a gate electrode is formed in the narrow trench 3b. As a result, a void formed within an interlayer insulated film 8 in the wide trench 3a can be removed by forming a contact hole 9. The reliability of the element is made higher by the removal of the void, thus improving the formation yield of a plug metal conductor 11, as well as reducing manufacturing cost. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
