发明名称 Multi-photon lithography
摘要 A system and method for patterned exposure of a photoactive medium is described wherein a pulsed optical beam with a high peak-power is stretched in the time domain to reduce the peak power while maintaining the average power. The stretched pulse illuminated a pattern, such as a transparent or reflective photolithography mask. The pattern is then imaged onto the photoactive medium after recompressing the beam. This arrangement prevents damage to the mask by the high peak power of the pulsed optical beam.
申请公布号 US2005254035(A1) 申请公布日期 2005.11.17
申请号 US20040843806 申请日期 2004.05.11
申请人 CHROMAPLEX, INC. 发明人 FRANKEL ROBERT
分类号 G03B27/54;G03F7/20;(IPC1-7):G03B27/54 主分类号 G03B27/54
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