发明名称 |
Method and apparatus for the chemical vapor deposition of materials |
摘要 |
The halide chemical vapor deposition process deposits a chemical compound comprised of at least two different elements. The method employs a first process gas which includes a halogenated compound of a first one of the at least two different elements, and a second process gas which includes hydrogen and a second one of at least two different elements. The process gases are maintained in separation until they are contacted in a deposition chamber proximate a substrate. The gases, which are generally preheated to a temperature of less than their thermal decomposition temperatures, are contacted in a deposition region proximate the substrate, and react to generate a deposition species and a hydrogen halide which is removed. Also disclosed is an apparatus for practicing the invention.
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申请公布号 |
US2005255245(A1) |
申请公布日期 |
2005.11.17 |
申请号 |
US20050032449 |
申请日期 |
2005.01.10 |
申请人 |
FANTON MARK A;SNYDER DAVID W;SKOWRONSKI MAREK |
发明人 |
FANTON MARK A.;SNYDER DAVID W.;SKOWRONSKI MAREK |
分类号 |
C23C16/00;C23C16/32;C23C16/44;C23C16/455;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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