发明名称 FORMATION OF AN INTERCONNECT STRUCTURE BY DECOMPOSING A PHOTOSENSITIVE DIELECTRIC LAYER
摘要 <p>The invention provides a method wherein a layer of photosensitive material is directly patterned. The photosensitive material is then at least partially decomposed to leave voids or air gaps in the layer to provide a low dielectric constant layer with reduced resistance capacitance delay characteristics.</p>
申请公布号 WO2005109490(A1) 申请公布日期 2005.11.17
申请号 WO2005US10919 申请日期 2005.03.31
申请人 INTEL CORPORATION;GOODNER, MICHAEL;O'BRIEN, KEVIN;KLOSTER, GRANT;MEAGLEY, ROBERT 发明人 GOODNER, MICHAEL;O'BRIEN, KEVIN;KLOSTER, GRANT;MEAGLEY, ROBERT
分类号 H01L21/768;(IPC1-7):H01L21/768 主分类号 H01L21/768
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