| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a solid-state image pickup element which can easily and precisely manufacture a structure with which an amount of handling charges in a charge transfer can be increased. SOLUTION: The manufacturing method has a process for forming a mask layer 22 in the center of a part becoming the charge transfer; a first ion implantation process for performing ion implantation 24 of first conduction-type impurities in the part serving as the charge transfer part by using the mask layer 22 as a mask; a process for removing the mask layer 22; and a second ion implantation process for implanting the ions of the first conduction-type impurities in the part serving as the charge transfer part. The solid-state image pickup element is hereby manufactured. COPYRIGHT: (C)2006,JPO&NCIPI
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