| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a substrate for the semiconductor device of the structure which has excellent cooling capability and which is simplified. <P>SOLUTION: In a substrate 1B for carrying the semiconductor device 2, a conducting layer 4 for attaching the semiconductor device 2 is formed on one surface side of an insulating layer 3, and a heat dissipating device 5 is connected directly to the other surface side of the insulating layer 3. The heat dissipation device 5 is preferred to be a liquid cooling type cooling plate 7 having a plurality of fine passages 7a through which cooling liquid flows. Moreover, as the insulating layer 3, it is preferred to use an insulating resin, an insulating resin composition obtained by mixing thermally conductive filler with the insulating resin, or a composite material obtained by immersing an insulating cloth with the insulating resin or the insulating resin composition. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
