发明名称 METHOD FOR FORMING OXIDE COATING FILM, OXIDE COATING FILM AND COATING FILM STRUCTURE
摘要 A method for forming an oxide coating film with good surface morphology and crystal quality by organic metal chemical vapor deposition using two or more kinds of organic metal compound material gas and oxygen gas is disclosed. A film-forming apparatus comprising a first supply port (11A), a second supply port (11B), a third supply port (11C) and a film formation chamber (7) is used therefor. A first material gas (A) containing a first organic metal compound is supplied through the first supply port (11A) into the chamber (7). A second material gas (B) containing a second organic metal compound is supplied through the second supply port (11B) into the chamber (7). Oxygen gas (C) is supplied through the third supply port (11C) into the chamber (7). Within the chamber (7), the oxygen gas (D) comes into contact with the first material gas (E) before being mixed with the second material gas (F).
申请公布号 KR20050109075(A) 申请公布日期 2005.11.17
申请号 KR20057016822 申请日期 2005.09.09
申请人 NGK INSULATORS, LTD. 发明人 IWAI MAKOTO;OHMORI MAKOTO;YOSHINO TAKASHI;IMAEDA MINORU
分类号 C23C16/40;C23C16/455;C30B25/02;C30B25/14;C30B29/30 主分类号 C23C16/40
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