发明名称 Bulk node biasing method and apparatus
摘要 A biasing circuit with application to a charge pump environment for coupling the appropriate terminal voltage potentials to the bulk node. Specifically, a pass gate, such as a transistor of an integrated circuit, operates to isolate a boosted voltage input from a boosting device such as a charge pump voltage doubler and to transfer or pass the related charge to an output that is coupled to a charge store. The input and output of the pass gate are subjected to variations in voltage levels creating transient voltage potential relationships between the input (e.g., source), the output (e.g., drain), and the pass gate substrate (e.g., bulk node). Such fluctuations are accommodated through continuous monitoring of the input and output terminals and, when appropriate, coupling the corresponding potential as exhibited at one of the input or output terminals to the substrate or bulk node of the pass gate.
申请公布号 US6965263(B2) 申请公布日期 2005.11.15
申请号 US20020268313 申请日期 2002.10.10
申请人 MICRON TECHNOLOGY, INC. 发明人 BRINGIVIJAYARAGHAVAN VENKATRAGHAVAN
分类号 H02M3/07;H03K17/06;(IPC1-7):G05F3/02 主分类号 H02M3/07
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