| 摘要 |
Switching operations, such as those used in memory devices, are enhanced using a thyristor-based semiconductor device adapted to switch between a blocking state and a conducting state. According to an example embodiment of the present invention, a thyristor-based semiconductor device includes a thyristor having first and second base regions coupled between first and second emitter regions, respectively. A first control port capacitively couples a first signal to the first base region, and a second control port capacitively couples a second signal to the second base region. Each of the first and second signals have a charge that is opposite in polarity, and the opposite polarity signals effect the switching of the thyristor at a lower power, relative to the power that would be required to switch the thyristor having only one control port. In this manner, power consumption for a switching operation can be reduced, which is useful, for example, to correspond with reduced power supplied to other devices in a semiconductor device employing the thyristor. |
