发明名称 CMOS tapered gate and synthesis method
摘要 A high-performance gate library is augmented with tapered gates. The widths of the stacked devices are varied to reduce the delay through some of the input pins. For example in a tapered NAND gate the bottom devices in the NFET stack are have longer widths than the top device to achieve smaller top input to output pin delay at the expense of larger bottom input to output pin delay. The method of using synthesis algorithms modifies the input net to gate pin connections and swaps traditional non-tapered gates with tapered gates to improve the delay of the timing critical paths. The latest arriving gate input net is swapped with the net connected to the top pin. The gate is then converted to a tapered gate provided the paths through the bottom gate input(s) that are not timing critical.
申请公布号 US6966046(B2) 申请公布日期 2005.11.15
申请号 US20010841505 申请日期 2001.04.24
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 CURRAN BRIAN W.;LACEY LISA BRYANT;NORTHROP GREGORY A.;PURI RUCHIR;STOK LEON
分类号 G06F17/50;H01L21/82;H03K19/096;H03K19/20;(IPC1-7):G06F17/50 主分类号 G06F17/50
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