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发明名称
GATE ELECTRODE WITH MULTI-POLYSILICON LAYER IN SEMICONDUCTOR DEVCIE AND METHOD FOR MANUFACTURING THE SAME
摘要
申请公布号
KR20050106854(A)
申请公布日期
2005.11.11
申请号
KR20040031911
申请日期
2004.05.06
申请人
HYNIX SEMICONDUCTOR INC.
发明人
YANG, HAE CHANG
分类号
H01L21/335;(IPC1-7):H01L21/335
主分类号
H01L21/335
代理机构
代理人
主权项
地址
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