发明名称 |
Processing a thin semiconductor wafer comprises heat treating the rear side of the wafer, applying a metal-based bonding covering layer, contacting the rear side substrate with wafer forming conducting side, etc. |
摘要 |
Processing a thin semiconductor wafer (1) having an active front side on which a front side supporting substrate (3) is mounted using a bonding layer (4) comprises: - (a) heat treating the rear side of the wafer; - (b) applying a metal-based bonding covering layer (7) on the rear side and/or on a rear side substrate (10); - (c) contacting the rear side substrate and the wafer forming a conducting metal-based bonding layer (11); - (d) removing the front side substrate; and - (e) structuring. - The metal-based bonding material is selected so that the materials, especially the wafer materials, in the neighboring layers and the metal-based bonding material are practically unmixed. - Preferred Features: A thick layer of silver paste or a conducting paste made from silver alloys, other noble metals or noble metal alloys is used as the metal-based bonding material. The rear side of the wafer and/or the contact surface of the rear side substrate is metallized before applying the metal-based bonding covering layer.
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申请公布号 |
DE10140826(B4) |
申请公布日期 |
2005.11.10 |
申请号 |
DE20011040826 |
申请日期 |
2001.08.21 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
KROENER, FRIEDRICH;SCHMIDT, THOMAS |
分类号 |
H01L21/68;(IPC1-7):H01L21/58;H01L21/60;H01L23/12 |
主分类号 |
H01L21/68 |
代理机构 |
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代理人 |
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地址 |
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