LEVEL REALIGNMENT FOLLOWING AN EPITAXY STEP

摘要

The invention relates to level realignment following an epitaxy step on a face (31) of a substrate (30), consisting in producing at least one initial reference mark (32) on the face of the substrate, whereby said mark is designed to be transferred during the epitaxy to the surface of the epitaxy layer (36). The initial reference mark (32) is produced such that, during the epitaxy, the edges thereof create growth defects which propagate to the surface of the epitaxy layer (36) in order to provide a transferred reference mark (37) on the surface of the epitaxy layer, which reproduces the shape of the initial reference mark (32) and which is aligned therewith.