SOI-type semiconductor device, and production method for manufacturing such SOI-type semiconductor device

摘要

In a silicon-on-insulator (SOI)-type semiconductor device, a buried silicon dioxide layer is produced in the silicon substrate. An area of the silicon substrate, which is sited above the buried silicon dioxide layer, is defined as an SOI area, and the remaining area is defined as a non-SOI area. A peripheral edge portion of the buried silicon dioxide layer is formed as a swelling edge portion. A first field-isolation layer is formed at the SOI area along the swelling edge portion of the buried silicon dioxide layer, a second field-isolation layer is formed at the non-SOI area along the swelling edge portion of the buried silicon dioxide layer.