发明名称 |
Display device and manufacturing method of the same |
摘要 |
The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
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申请公布号 |
US2005250273(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20050180658 |
申请日期 |
2005.07.14 |
申请人 |
HITACHI DISPLAYS, LTD. |
发明人 |
HARANO YUICHI;GOTOH JUN;KANEKO TOSHIKI;YAMAMOTO MASANAO |
分类号 |
G02F1/1368;G09F9/30;H01L21/28;H01L21/285;H01L21/3205;H01L21/336;H01L21/768;H01L21/77;H01L23/52;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L21/336 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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