发明名称 Display device and manufacturing method of the same
摘要 The present invention prevents the diffusion of an aluminum element into a polysilicon layer in a heating step when an aluminum-based conductive layer is used in a source/drain electrode which is in contact with low-temperature polysilicon whereby the occurrence of defective display can be obviated. An aluminum-based conductive layer is used in a source/drain electrode and a barrier layer made of molybdenum or a molybdenum alloy layer is formed between the aluminum-based conductive layer and a polysilicon layer. Further, a molybdenum oxide nitride film formed by the rapid heat treatment (rapid heat annealing) in a nitrogen atmosphere is formed over a surface of the molybdenum or the molybdenum alloy which constitutes the barrier layer.
申请公布号 US2005250273(A1) 申请公布日期 2005.11.10
申请号 US20050180658 申请日期 2005.07.14
申请人 HITACHI DISPLAYS, LTD. 发明人 HARANO YUICHI;GOTOH JUN;KANEKO TOSHIKI;YAMAMOTO MASANAO
分类号 G02F1/1368;G09F9/30;H01L21/28;H01L21/285;H01L21/3205;H01L21/336;H01L21/768;H01L21/77;H01L23/52;H01L29/417;H01L29/45;H01L29/786;(IPC1-7):H01L21/336 主分类号 G02F1/1368
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