发明名称 |
METHOD FOR FABRICATING A SELF-ALIGNED BIPOLAR TRANSISTOR AND RELATED STRUCTURE |
摘要 |
According to one exemplary embodiment, a bipolar transistor comprises a base having a top surface. The bipolar transistor further comprises a sacrificial post which, in one exemplary embodiment, is situated between first and second link spacers. The bipolar transistor also comprises a conformal layer situated over the sacrificial post. The conformal layer may comprise silicon oxide, for example. According to this exemplary embodiment, the bipolar transistor further comprises a sacrificial planarizing layer situated over the conformal layer, the sacrificial post, and the base. The sacrificial planarizing layer has a first thickness in a first region between the first and second link spacers and a second thickness in a second region outside of the first and second link spacers, where the second thickness is generally greater than the first thickness. Another embodiment is a method that achieves the above-described bipolar transistor.
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申请公布号 |
WO2004015755(B1) |
申请公布日期 |
2005.11.10 |
申请号 |
WO2003US21193 |
申请日期 |
2003.07.03 |
申请人 |
NEWPORT FAB, LLC DBA JAZZ SEMICONDUCTOR |
发明人 |
KALBURGE, AMOL;RACANELLI, MARCO |
分类号 |
H01L21/331;H01L29/08;(IPC1-7):H01L21/331;H01L29/00;H01L27/082 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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