发明名称 Damascene process for use in fabricating semiconductor structures having micro/nano gaps
摘要 In fabricating a microelectromechanical structure (MEMS), a method of forming a narrow gap in the MEMS includes a) depositing a layer of sacrificial material on the surface of a supporting substrate, b) photoresist masking and at least partially etching the sacrificial material to form at least one blade of sacrificial material, c) depositing a structural layer over the sacrificial layer, and d) removing the sacrificial layer including the blade of the sacrificial material with a narrow gap remaining in the structural layer where the blade of sacrificial material was removed.
申请公布号 US2005250236(A1) 申请公布日期 2005.11.10
申请号 US20050121690 申请日期 2005.05.03
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 TAKEUCHI HIDEKI;QUEVY EMMANUEL P.;KING TSU-JAE;HOWE ROGER T.
分类号 H01L21/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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