| 摘要 |
<P>PROBLEM TO BE SOLVED: To narrow a band of an emission spectrum of a gallium nitride system light emitting device. <P>SOLUTION: The gallium nitride system light emitting device has a sapphire substrate 10 on which a low temperature buffer layer 12 and a high temperature buffer layer (GaN system layer) 14 are formed as a foundation layer on which an n-type contact layer 16, an n-type clad layer 18, a light emitting layer 20, a p-type clad layer 22, and a p-type contact layer 24 are laminated. The n-type contact layer 16 is an InGaN and its band gap energy is smaller enough than that of a band gap of the light emitting layer 20 and its film thickness is not less than 200 nm, so that the light emitted downward from the light emitting layer 20 is absorbed to narrow a half-power bandwidth of the emission spectrum. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
