发明名称 |
In situ doped epitaxial films |
摘要 |
A method for depositing an in situ doped epitaxial semiconductor layer comprises maintaining a pressure of greater than about 80 torr in a process chamber housing a patterned substrate. The method further comprises providing a flow of dichlorosilane to the process chamber. The method further comprises providing a flow of a dopant hydride to the process chamber. The method further comprises selectively depositing the epitaxial semiconductor layer on single crystal material on the patterned substrate at a rate of greater than about 3 nm min<SUP>-1</SUP>.
|
申请公布号 |
US2005250298(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
US20050113829 |
申请日期 |
2005.04.25 |
申请人 |
BAUER MATTHIAS |
发明人 |
BAUER MATTHIAS |
分类号 |
C30B1/00;C30B25/02;C30B25/16;C30B29/52;H01L21/20;H01L21/205;H01L21/285;H01L21/31;H01L21/36;H01L21/469;(IPC1-7):C30B1/00 |
主分类号 |
C30B1/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|