发明名称 |
MOS CAPACITOR AND SEMICONDUCTOR DEVICE |
摘要 |
A capacitor capable of functioning as a capacitor even when an AC voltage is applied thereto is provided without increasing the manufacturing steps of a semiconductor device. A transistor is used as a MOS capacitor where a pair of impurity regions formed on opposite sides of a channel formation region are each doped with impurities of different conductivity so as to be used as a source region or a drain region. Specifically, assuming that an impurity region that is doped with N-type impurities is referred to as an N-type region while an impurity region that is doped with P-type impurities is referred to as a P-type region, a transistor is provided where a channel formation region is interposed between the N-type region and the P-type region, which is used as a MOS capacitor. |
申请公布号 |
WO2005106961(A1) |
申请公布日期 |
2005.11.10 |
申请号 |
WO2005JP08087 |
申请日期 |
2005.04.21 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;KATO, KIYOSHI;SHIONOIRI, YUTAKA |
发明人 |
KATO, KIYOSHI;SHIONOIRI, YUTAKA |
分类号 |
G02F1/1368;G02F1/1362;H01L21/288;H01L21/3205;H01L21/336;H01L21/768;H01L21/77;H01L21/822;H01L21/8234;H01L21/8242;H01L21/84;H01L27/04;H01L27/06;H01L27/08;H01L27/108;H01L27/12;H01L27/13;H01L29/04;H01L29/786;(IPC1-7):H01L29/786;G02F1/136;H01L21/824 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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