| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reduce maximum operating voltage and power consumption for a discrete trap memory. <P>SOLUTION: Electron is injected in a charge storage film 12, the charge distribution is made even, and data is deleted. In writing the data, voltage with direction where a source area (SBL1) becomes a positive polarity side and a gate electrode (WL1) becomes a negative electrode side is impressed between the source area (SBL1) and the gate electrode (WL1). In this process, holes which are minor carriers for the source area (SBL1) are injected into the charge storage film 12 from the source side, and the amount of the charges in the source side parts 12s of the charge storage film 12 is relatively shifted to the positive polarity side 12d for other parts of the charge storage film. Threshold voltage is lowered by this. The writing is performed from the source side in this operation method without forming a channel, so that the maximum operating voltage and the power consumption are lower. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
