发明名称 MANUFACTUREING METHOD AND LIFT PIN OF SEMICONDUCTOR PRODUCTION DEVICE THEREFOR
摘要 Provided are a lift pin capable of preventing aluminum from depositing on the lift pin when depositing a metallic layer on a wafer through chemical vapor deposition. a system using the lift pin, and a method of manufacturing the same. The lift pin is made of stainless steel and is oxidized at a predetermined temperature for a predetermined time, such that the lift pin is not deposited with aluminum during a CVD process. Since the CVD vacuum processing chamber utilizes the heater and the lift pin which are made of oxidized SUS material, aluminum does not deposit on the heater and the lift. Therefore, when the lift pin is lowered, the lift pin is not lowered by its own weight, thereby preventing a wafer from being broken. Also, the lift pin is prevented from being ruptured by a robot moving in and out of an opening of the CVD vacuum processing chamber.
申请公布号 KR100526923(B1) 申请公布日期 2005.11.09
申请号 KR20040000233 申请日期 2004.01.05
申请人 发明人
分类号 H01L21/205;C23C16/00;C23C16/44;C23C16/458;H01L21/687;(IPC1-7):H01L21/205 主分类号 H01L21/205
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