Chip sized semiconductor device and a process for making it

摘要

A process for making a chip sized semiconductor device (30), in which a semiconductor chip (32) is prepared so as to have electrodes on one surfaces thereof and an electrically insulating passivation film (34) formed on the one surface except for areas where the electrodes (36) exist. An insulation sheet (38) is prepared so as to have first and second surfaces and a metallic film (60) coated on the first surface. The second surface of the insulation sheet (38) is adhered on the semiconductor chip (32). First via-holes (39) are provided in the metallic film (40) at positions corresponding to the electrodes (36). Second via-holes (39) are provided in the insulation sheet (38) at positions corresponding to the first via-holes (39) so that the electrodes (36) are exposed. The metallic film (40) is electrically connected to the electrodes (36) of the semiconductor chip (32) through the first and second via-holes (39). A circuit pattern (40) is formed from the metallic film so that the circuit pattern (40) has external terminal connecting portions (43). An insulation film (42) is adhered on the insulation sheet (38) so that the external terminal connecting portions (43) are exposed. External connecting terminals (46) are electrically connected to the external terminal connecting portions (43) of the circuit pattern (40).