发明名称 PATTERN FORMING METHOD AND PATTERN FORMING APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a pattern forming method and a pattern forming apparatus by which a pattern in a relatively wide region of a square millimeter or larger can be formed in a short time by electrochemical lithographic pattern forming method and the pattern can be formed without using an expensive apparatus such as an AFM (atomic force microscope) and an STM (scanning tunneling microscope). <P>SOLUTION: After an organic material layer 2 such as an organic silane is applied on a substrate 1 having conductivity, a mask 14 made of a conductive material and having a predetermined pattern is mounted on the organic material layer 2 and a voltage is applied between the substrate 1 and the mask 14 in a water-containing atmosphere to form a pattern in the organic material layer 2 corresponding to the mask 14. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005309245(A) 申请公布日期 2005.11.04
申请号 JP20040128750 申请日期 2004.04.23
申请人 SONY CORP 发明人 YO TAKUCHU
分类号 G03F1/92;H01L21/027 主分类号 G03F1/92
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