HEAT RADIATING PLATE MADE OF SILICON CARBIDE

摘要

PROBLEM TO BE SOLVED: To provide a heat radiating plate with an excellent heat conductivity which can be suitably used as a substrate for modules for loading a semiconductor device having a higher releasing value. SOLUTION: In the heat radiating plate made of silicon carbide obtained by processing silicon carbide monocrystal or silicon carbide polycrystal produced by a sublimation recrystallization method, the heat conductivity of the heat radiating plate at an ordinary temperature is 200 to 550 W/mK. COPYRIGHT: (C)2006,JPO&NCIPI