| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a III-nitride light-emitting device which solves various conventional problems, such as decrease in the internal quantum efficiency. <P>SOLUTION: In the III-nitride light emitting device, a ternary or quaternary light-emitting layer is configured to control the degree of phase separation. In some embodiments, the difference between the InN composition at any point in the light-emitting layer and the average InN composition in the light-emitting layer is less than 20%. In some embodiments, control of phase separation is accomplished by controlling the ratio of the lattice constant in a relaxed, free standing layer having the same composition as the light-emitting layer to the lattice constant in a base region. For example, the ratio can be set between about 1 and about 1.01. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
