发明名称 MANUFACTURE OF STRUCTURE EQUIPPED WITH SEMICONDUCTOR MATERIAL ON SUBSTRATE
摘要 <P>PROBLEM TO BE SOLVED: To separate/divide a structure from a donor substrate, in which the structure such as an LED, a laser diode or the like is formed, in good yield and low cost. <P>SOLUTION: The donor substrate and a receiver substrate are prepared, and the receiver substrate comprises one or more motifs on the front surface by relief, furthermore, the donor substrate is combined with the receiver substrate in the motif. A frangible region exists in the donor substrate at a designated depth, and a thin layer is prepared between the frangible region and a joint interface. This method keeps a combination between the motif and the donor substrate, and peels off a portion of the thin layer which locates in each motif from the donor substrate by generating fracture in the frangible region and a thickness of the thin layer, then gives energy in order to make the peeled portion be the structure. <P>COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2005311307(A) 申请公布日期 2005.11.04
申请号 JP20050056052 申请日期 2005.03.01
申请人 SOI TEC SILICON ON INSULATOR TECHNOLOGIES 发明人 LE VAILLANT YVES MATHIEU;RAYSSAC OLIVIER;FERNANDEZ CHRISTOPHE
分类号 H01L33/00;H01L21/02;H01L21/20;H01L21/301;H01L21/762;H01S5/022 主分类号 H01L33/00
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